N-Channel MOSFET - Renesas
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04MLG, NP82N04NLG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The NP82N04MLG and NP82N04NLG are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP82N04MLG-S18-AY Note NP82N04NLG-S18-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube
50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode.
)
PACKAGE TO-220 (MP-25K) typ.
1.
9 g TO-262 (MP-25SK) typ.
1.
8 g
FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance
RDS(on)1 = 4.
2 mΩ MAX.
(VGS = 10 V, ID = 41 A) RDS(on)2 = 8.
5 mΩ MAX.
(VGS = 4.
5 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 6000 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-220) (TO-262)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2
Tstg IAR EAR
40 ±20 ±82 ±328 143 1.
8 175 −55 to +175 43 185
V V A A W W °C °C A mJ
Notes 1.
PW ≤ 10 μs, Duty Cycle ≤ 1% 2.
Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
1.
05 83.
3
°C/W °C/W
The information in this document is subject to change without notice.
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confirm that this is the latest version.
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Document No.
D19801EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan
2009
NP82N04MLG, NP82N04NLG
ELECTRICAL CHARACTERISTICS (TA =...
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