Power MOSFET - International Rectifier
Description
PD - 95574A
IRFZ48ZPbF
IRFZ48ZSPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRFZ48ZLPbF
HEXFET® Power MOSFET D VDSS = 55V
G RDS(on) = 11mΩ S ID = 61A
TO-220AB IRFZ48ZPbF
D2Pak
TO-262
IRFZ48ZSPbF IRFZ48ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig.
9)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS EAS EAS (tested) IAR EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited) iSingle Pulse Avalanche Energy Tested Value cAvalanche Current hRepetitive Avalanche Energy
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.
irf.
com
Max.
61 43 240 91 0.
61 ± 20 73 120
See Fig.
12a,12b,15,16
-55 to + 175
300 (1.
6mm from case ) 10 lbf•in (1.
1N•m)
Typ.
––– 0.
50 ––– –––
Max.
1.
64 ––– 62 40
Units A
W W/°C
V mJ A mJ °C
Units °C/W
1
09/27/10
IRFZ48Z/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th)
Drain-to-Source Breakdown V...
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