N-Channel MOSFET - Fairchild Semiconductor
Description
FDB8160_F085 N-Channel PowerTrench® MOSFET
FDB8160_F085
N-Channel PowerTrench® MOSFET
30V, 80A, 1.
8mΩ
October 2010
Features
Typ rDS(on) = 1.
5mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 187nC at VGS = 10V Low Miller Charge Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
RoHS Compliant
Applications
12V Automotive Load Control Starter/Alternator Systems Electronic Power Steering Systems DC/DC converter
TO-263AB FDB SERIES
©2010 Fairchild Semiconductor Corporation FDB8160_F085 Rev.
C
1
www.
fairchildsemi.
com
FDB8160_F085 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage
Gate to Source Voltage Drain Current Continuous (TC < 160oC, VGS = 10V) Pulsed
EAS Single Pulse Avalanche Energy
PD
Power Dissipation Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
RθJC RθJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area
Ratings 30 ±20 80
See Figure 4 1290 254 1.
7
-55 to +175
0.
59
43
Units V V
A
mJ W W/oC oC
oC/W oC/W
Package Marking and Ordering Information
Device Marking
Device
FDB8160
FDB8160_F085
Package TO-263AB
Reel Size 330mm
Tape Width 24mm
Quantity 800 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V VDS = 24V, VGS = 0V
TJ = 150oC VGS = ±20V
30 -
- -V
-
1 250
μA
- ±100 nA
VGS(th) rDS(on)
Gate to Source Threshold Voltage Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA ID = 80A, VGS= 10V ID = 80A, VGS= 10V, TJ = 175°C
2 -
2.
9 4
V
1.
5 1.
8 mΩ
2.
6 3.
1 mΩ
Ciss Coss Crss Rg
Qg(TOT) Qg(th) Qgs Qgs2 Q...
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