POWER MOSFET - International Rectifier
Description
IRF8308MPbF
DirectFET Power MOSFET
l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)
l Low Profile (<0.
7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.
9mΩ@ 10V 2.
7mΩ@ 4.
5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
l Ideal for CPU Core DC-DC Converters
28nC 8.
2nC 3.
5nC 34nC 20nC 1.
8V
l Optimized for Sync.
FET socket of Sync.
Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details)
MX
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT MP
Description
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-
induced turn on immunity.
The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
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