N-Channel MOSFET - Renesas
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N055KUG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP88N055KUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP88N055KUG
TO-263 (MP-25ZK)
FEATURES
• Channel temperature 175 degree rating • Super low on-state resistance
RDS(on) = 3.
9 mΩ MAX.
(VGS = 10 V, ID = 44 A) • Low Ciss: Ciss = 9600 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±88 ±352
Total Power Dissipation (TA = 25°C)
PT1 1.
8
Total Power Dissipation (TC = 25°C)
PT2 200
Channel Temperature
Tch 175
Storage Temperature
Tstg −55 to +175
Repetitive Avalanche Current Note2
IAR 50
Repetitive Avalanche Energy Note2
EAR 250
Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1%
2.
Tch ≤ 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V
V V A A W W °C °C A mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
0.
75 83.
3
°C/W °C/W
The information in this document is subject to change without notice.
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Document No.
D16856EJ1V0DS00 (1st edition) Date Published August 2004 NS CP(K) Printed in Japan
2004
NP88N055KUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 55 V, VGS = 0 V
Gate Leakage Current Gate to Source Threshold Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Note
IGSS VGS(th) | yfs | RDS(on)
VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = 10 V, ID = 44 A VGS = 10 V, ID = 44 A
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