2SD1137 - Hitachi Semiconductor
Description
2SD1137
Silicon NPN Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860
Outline
TO-220AB
1 23
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation
Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC (peak) PC PC * 1 Tj Tstg
1.
Base 2.
Collector
(Flange) 3.
Emitter
Rating 100 100 4 4 5 1.
8 40 150 –45 to +150
Unit V V V A A W W °C °C
2SD1137
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO voltage
100
Emitter to base breakdown voltage
V(BR)EBO
4
Collector cutoff current Emitter cutoff current DC current transfer ratio
I CEO
—
I EBO
—
hFE 50
25
Collector to emitter saturation VCE (sat) voltage
—
Note: 1.
Pulse test.
Typ —
—
— — — — —
Max Unit —V
—V
100 µA 50 µA 250 350 1.
0 V
Test conditions IC = 10 mA, RBE = ∞
IE = 1 mA, IC = 0
VCE = 80 V, RBE = ∞
VEB = 3.
5 V, IC = 0
VCE = 4 V
IC = 0.
5 A*1
IC = 50 mA
IC = 1 A, IB = 0.
1 A
Collector power dissipation PC (W) Collector current IC (A)
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150 Case temperature TC (°C)
Area of Safe Operation 10
(10 V, 4 A)
3
1.
0
DC Operation TC = 25°C
(40 V, 1 A)
0.
3
0.
1 (100 V, 50 mA)
0.
03
0.
01 1
3
10 30 100 300 1,000
Collector to emitter voltage VCE (V)
2
Collector current IC (A)
Typical Output Characteristecs
1.
0 10
TC = 25°C
8 0.
8
6 0.
6
4 0.
4
2 mA 0.
2
IB = 0
0 2 4 6 8 10 Collector to emitter voltage VCE (V)
Collector to Emitter Saturation Voltage vs.
Collector Current
10 IC = 10 IB
3 TC = 75°C
1.
0 25°C
0.
3 –25°C
0.
1
0.
03
0.
01 0.
01 0.
03 0.
1 0.
3 1.
0 3 Collector current IC (A)
10
DC current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
2SD1137
1,000
DC Current Transfer Ratio vs.
Collector Current
VCE = 5 V
300 TC =...
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