4V Drive Nch + Pch MOSFET - Rohm
Description
Data Sheet
4V Drive Nch + Pch MOSFET
SP8M51
Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET
Dimensions (Unit : mm)
SOP8
Features 1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
(8) (5) (1) (4)
Application Switching
Inner circuit
Packaging specifications
(8) (7) (6) (5)
Type SP8M51
Package Code Basic ordering unit (pieces)
Taping TB 2500
Absolute maximum ratings (Ta = 25C)
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗2
∗2
∗1 ∗1
(1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Parameter
Drain-source voltage Gate-source voltage
Drain current
Source current (Body Diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation
Channel temperature Range of storage temperature
Symbol
Limits
Tr1 : N-ch Tr2 : P-ch
Unit
VDSS VGSS
ID IDP *1 Is Isp *1
100 ±20 3.
0 12 1.
0 12
100 ±20 2.
5 10 1.
0 10
V V A A A A
PD *2
2.
0 W / TOTAL 1.
4 W / ELEMENT
Tch 150 Tstg 55 to 150
C C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
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1/10
2011.
02 - Rev.
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SP8M51
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state resistance
RDS
*
(on)
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
l Yfs l * Ciss Coss Crss td(on) *
tr * td(off)*
tf * Qg * Qgs * Qgd *
Min.
-
100 -
1.
0 -
3.
5 -
Typ.
-
120 130 135
610 55 35 13 13 50 14 8.
5 1.
8 3.
5
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max.
10
1 2.
5 170 180 190 -...
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