Schottky Barrier Diode - Rohm
Description
Schottky Barrier Diode
RB162MM-30
lApplication General rectification
lDimensions (Unit : mm)
1.
6±0.
1
0.
1±00.
.
015
Data Sheet
lLand Size Figure (Unit : mm)
1.
2
2.
6±0.
1 33.
.
55±±00.
.
1122
0.
85 3.
05
lFeatures 1) Small power mold type
(PMDU) 2) High reliability 3) Low VF
lConstruction Silicon epitaxial planar type
PMDU
0.
9±0.
1
0.
8±0.
1
lStructure Cathode
ROHM : PMDU JEDEC : SOD-123FL
: Manufacture Date
lTaping Dimensions (Unit : mm)
4.
0±0.
1 2.
0±0.
05
φf11.
.
5555±00.
0.
055
Anode
0.
25±0.
05
1.
75±0.
1
8.
0±0.
2 3.
3.
7711±0±.
00.
81
3.
5±0.
05
1.
81±0.
1
4.
0±0.
1
fφ11.
0.
0±0.
01.
1
1.
5MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.
5
30 V
Reverse Voltage
VR Direct Reverse Voltage
30 V
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Io IFSM
Glass epoxi mounted, 60Hz half sin Wave resistive load, Tc=124°C max.
60Hz half sin wave,
Non-repetitive at Ta=25°C,1cycle
1 30
A A
Operating Junction Temperature
Tj
-
150 °C
Storage Temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage Reverse Current
VF IR
Conditions IF=1.
0A VR=30V
Min.
Typ.
Max.
Unit - 0.
44 0.
52 V - 10 100 mA
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rohm.
com © 2015 ROHM Co.
, Ltd.
All rights reserved.
1/5
2015.
09 - Rev.
B
RB162MM-30 lElectrical Characteristic Curves
Data Sheet
FORWARD CURRENT : IF(A)
10
1 0.
1 0.
01
Tj = 150°C Tj = 125°C Tj = 75°C Tj = 25°C
0.
001 0
Tj = -25°C 200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
REVERSE CURRENT : IR(mA)
10000 1000
Tj = 150°C
100
10
Tj = 125°C Tj = 75°C
1 Tj = 25°C
0.
1
0.
01 0
Tj = -25°C
10 20
REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS
30
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
FORWARD VOLTAGE : VF(mV)
1000
Tj = 25°C f = 1MHz
570 550 530
Tj=25°C IF=1.
0A n=30pcs
510
490 100
470 Ave.
: 439.
2mV
450
430
410
10 0
390 10 20 30
REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
...
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