60V N-Channel MOSFET - Alpha & Omega Semiconductors
Description
AOD442/AOI442
60V N-Channel MOSFET
General Description
Product Summary
The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge.
Those devices are suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V)
100% UIS Tested 100% Rg Tested
60V 37A
< 20mΩ
< 25mΩ
Top View D
TO252 DPAK
Bottom View
D
Top View
TO-251A IPAK
Bottom View
D
D
S G
G S
S
D G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.
1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 60 ±20 37 26
60 7 5 30 45 60 30 2.
1 1.
3 -55 to 175
G
D S
G
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 17.
4 51 1.
8
Max 25 60 2.
5
S
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Rev 0 : Aug 2009
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AOD442/AOI442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
IDSS Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
TJ=55°C
1 5 µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.
6 2.
1 2.
7
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
16 31
20 37
mΩ
VGS=4.
5V, ID=20A
20 25 mΩ
gFS Forward Transconductance
VDS=5V, ID=20A
65 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.
7 1
V
IS Maximum B...
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