2SC2921 - Sanken
Description
LAPT 2SC2921
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215)
Application : Audio and General Purpose
sAbsolute maximum ratings
Symbol
2SC2921
VCBO
160
VCEO
160
VEBO IC IB PC Tj Tstg
5 15 4 150(Tc=25°C) 150 –55 to +150
(Ta=25°C) Unit V V V A A W °C °C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
2SC2921 Unit
ICBO
VCB=160V
100max
µA
IEBO
VEB=5V
100max
µA
V(BR)CEO hFE
IC=25mA VCE=4V, IC=5A
160min 50min∗
V
VCE(sat)
IC=5A, IB=0.
5A
2.
0max
V
fT
VCE=12V, IE=–2A
60typ
MHz
COB
VCB=10V, f=1MHz
200typ
pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC VB2 IB1
(V) (Ω) (A) (V) (mA)
60 12 5 –5 500
IB2 (mA)
–500
ton (µs)
0.
2typ
tstg (µs)
1.
5typ
tf (µs)
0.
35typ
External Dimensions MT-200
2-ø3.
2±0.
1
36.
4±0.
3 24.
4±0.
2
6.
0±0.
2
2.
1 9
7
21.
4±0.
3
20.
0min 4.
0max
a b
2
3
1.
05
+0.
2 -0.
1
0.
65 +-00.
.
12
5.
45±0.
1
5.
45±0.
1
3.
0
+0.
3 -0.
1
BCE
Weight : Approx 18.
4g a.
Type No.
b.
Lot No.
Collector Current IC(A) 750mA
I C– V CE Characteristics (Typical)
15
600mA 500mA
400mA
300mA
200mA 10 150mA
100mA
5 50mA
IB=20mA
0 0 12 34 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 15
Collector Current IC(A) –235˚0˚1C2C5(˚CC (asCeasTeeTmepm)p)
2 10
1
IC=10A 5A
0
0
0.
2 0.
4 0.
6 0.
8
1.
0
Base Current IB(A)
5
0 012 Base-Emittor Voltage VBE(V)
Transient Thermal Resistance θ j-a( ˚ C / W )
DC Current Gain hFE
DC Current Gain hFE
h FE– I C Characteristics (Typical)
200
(VCE=4V)
100 Typ
50
h FE– I C Temperature Characteristics (Typical)
200 125˚C
(VCE=4V)
100 25˚C –30˚C
50
θ j-a– t Characteristics
2 1 0.
5
10 0.
02
0.
1 0.
5 1 Collector Current IC(A)
10 15
20 0.
02
0.
1 0.
5 1 Collector Current IC(A)
5 10 15
0.
1 1
10 100 Time t(ms)
1000 2000
Maximum Power Dissipation PC(W)
f T– I...
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