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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4078
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
2SK4078-ZK-E1-AY Note 2SK4078-ZK-E2-AY Note
Pure Sn (Tin)
PACKING Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode. )
PACKAGE
TO-252 (MP-3ZK) typ. 0. 27 g
FEATURES • Low on-state resistance
RDS(on)1 = 8. 5 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 14. 0 mΩ MAX. (VGS = 4. 5 V, ID = 13 A) • Low input capacitance Ciss = 2300 pF TYP. • Logic level drive type
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±50 ±150
Total Power Dissipation (TC = 25°C)
PT1
45
Total Power Dissipation (TA = 25°C)
PT2
1. 0
Channel Temperature
Tch 150
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg −55 to +150 IAS 23 EAS 52
V V A A W W °C °C A mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
2. 77 125
°C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18885EJ1V0DS00 (1st edition) Date Published July 2007 NS Printed in Japan
2007
2SK4078
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
IGSS
Gate to Sour...
K4078 PDF File
