N-Channel MOSFET - CET
Description
CED02N9/CEU02N9
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
900V, 2A, RDS(ON) = 6.
8Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
900
±30
2 8 75 0.
5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2 50
Units V V A A W
W/ C C
Units C/W C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1.
2011.
May http://www.
cet-mos.
com
CED02N9/CEU02N9
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
900
25 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 1A
2
4 5.
3 6.
8
V Ω
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss
VDS = 25V, VGS = 0V, f = 1.
0 MHz
690 70
pF pF
Crss 15 pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 450V, ID = 2.
2A, VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain C...
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