N-Channel MOSFET - CET
Description
CED05N65/CEU05N65
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 4A, RDS(ON) = 2.
4Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM PD
650
±30
4
2.
5 16 56 0.
45
Single Pulsed Avalanche Energy d
EAS 43
Single Pulsed Avalanche Current d
IAS 3.
5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.
2 50
Units V V A A A W
W/ C mJ A C
Units C/W C/W
Details are subject to change without notice .
1
Rev 3.
2011.
Nov http://www.
cet-mos.
com
CED05N65/CEU05N65
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
650
25 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 2A
2
4V 2 2.
4 Ω
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss
VDS = 25V, VGS = 0V, f = 1.
0 MHz
570 105
pF pF
Crss 20 pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 300V, ID = 4A, VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
To...
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