N-Channel MOSFET - CET
Description
CED16N10/CEU16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 13.
3A, RDS(ON) = 120mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
100
±20
13.
3 53 43 0.
34
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3.
5 50
Units V V A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 2.
2013.
Mar http://www.
cet-mos.
com
CED16N10/CEU16N10
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA VDS = 100, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
100
1 100 -100
V µA nA nA
VGS = VDS, ID = 250µA VGS = 10V, ID = 6.
5A VDS = 10V, ID = 6.
5A
2
4V 100 120 mΩ
5S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss
VDS = 25V, VGS = 0V, f = 1.
0 MHz
530 100
pF pF
Crss 22 pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 50V, ID = 13.
3A, VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS...
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