N-Channel MOSFET - CET
Description
CED6336/CEU6336
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 25A , RDS(ON) = 41mΩ @VGS = 10V.
RDS(ON) = 55mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
60
±20
25 100 40 0.
06
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3.
2 50
Units V V A A W
W/ C C
Units C/W C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1.
2007.
Jan http://www.
cetsemi.
com
CED6336/CEU6336
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c
Symbol
Test Condition
Min Typ Max Units
BVDSS IDSS IGSSF IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
60
VGS = VDS, ID = 250µA VGS = 10V, ID = 12.
5A VGS = 4.
5V, ID = 10A
1
1 100 -100
V µA nA nA
3V 33 41 mΩ 41 55 mΩ
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
gFS Ciss Coss Crss
VDS = 15V, ID = 25A VDS = 30V, VGS = 0V, f = 1.
0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 30V, ID = 4.
4A, VGS = 10V, RGEN ...
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