CED6056/CEU6056
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 76A , RDS(ON) = 6. 2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 76 IDM 304
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
70 0. 47
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
EAS 272 IAS 33
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2. 2 50
Units V V A A W
W/ C mJ A C
Units C/W C/W
Details are subject to change without notice .
1
Rev 1. 2010. July http://www. cet-mos. com
CED6056/CEU6056
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 35A
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
gFS Ciss Coss Crss
VDS = 25V, ID = 50A VDS = 25V, VGS = 0V, f = 1. 0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 30V, ID = 50A, VGS = 10V, RGEN = 3. 6Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 48...
CEU6056 PDF File
