N-Channel MOSFET - CET
Description
CED84A4/CEU84A4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 80A, RDS(ON) = 5.
1mΩ @VGS = 10V.
RDS(ON) = 7.
8mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
VDS VGS
ID
40
±20
80
56
Drain Current-Pulsed a
IDM 320
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
57.
7 0.
38
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.
6 50
Units V V A A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 1.
2011.
Mar http://www.
cet-mos.
com
CED84A4/CEU84A4
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
40
1 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 30A VGS = 4.
5V, ID =20A
1
3V 4 5.
1 mΩ 5.
8 7.
8 mΩ
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d
Ciss Coss Crss
VDS = 15V, VGS = 0V, f = 1.
0 MHz
3070 385 285
pF pF pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge ...
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