DatasheetsPDF.com

IRL1404ZLPbF

International Rectifier
Part Number IRL1404ZLPbF
Manufacturer International Rectifier
Description MOSFET
Published Sep 14, 2015
Detailed Description Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Swit...
Datasheet PDF File IRL1404ZLPbF PDF File

IRL1404ZLPbF
IRL1404ZLPbF

Overview
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95446B IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.
1mΩ G ID = 120A S TO-220AB D2Pak TO-262 IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V ™Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Gate-to-Source Voltage dSingle Pulse Avalanche Energy hSingle Pulse Avalanche Energy Tested Value ÙAvalanche Current gRepetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case iCase-to-Sink, Flat, Greased Surface iJunction-to-Ambient jÃJunction-to-Ambient (PCB Mount) www.
irf.
com Max.
k200 k140 k120 790 230 1.
5 ± 16 220 490 See Fig.
12a, 12b, 15, 16 -55 to + 175 300 (1.
6mm from case ) y y10 lbf in (1.
1N m) Typ.
––– 0.
50 ––– ––– Max.
0.
65 ––– 62 40 Units A W W/°C V mJ A mJ °C Units °C/W 1 06/25/12 IRL1404Z/S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Co...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)