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IRF661TRPbF

International Rectifier
Part Number IRF661TRPbF
Manufacturer International Rectifier
Description MOSFET
Published Sep 14, 2015
Detailed Description RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters...
Datasheet PDF File IRF661TRPbF PDF File

IRF661TRPbF
IRF661TRPbF


Overview
RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.
7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques PD - 97215 IRF6612PbF IRF661TRPbF DirectFET™ Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 2.
5mΩ@ 10V 3.
4mΩ@ 4.
5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 30nC 10nC 2.
9nC 8.
1nC 18nC 1.
8V Applicable DirectFET Package/Layout Pad (see p.
8,9 for details) MX DirectFET™ ISOMETRIC SQ SX ST MQ MX MT Description The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
Application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced losses make this product ideal for high frequency/ high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors.
The IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V) Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM EAS IAR 10 Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Cont...


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