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MDF18N50B

MagnaChip
Part Number MDF18N50B
Manufacturer MagnaChip
Description N-Channel MOSFET
Published Sep 13, 2015
Detailed Description MDP1850B / MDF18N50B N-channel MOSFET 500V MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Descript...
Datasheet PDF File MDF18N50B PDF File

MDF18N50B
MDF18N50B


Overview
MDP1850B / MDF18N50B N-channel MOSFET 500V MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.
0 A, 0.
27Ω General Description The MDP/F18N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP/F18N50B is suitable device for SMPS, HID and general purpose applications.
Features  VDS = 500V  ID = 18.
0A  RDS(ON) ≤ 0.
27Ω @VGS = 10V @VGS = 10V Applications  Power Supply  PFC  Ballast G D S TO-220 MDP Series GD S TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Aug.
2021.
Version1.
1 11 Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP18N50B MDF18N50B 500 ±30 18 18* 11 11* 72 72* 236 37 1.
89 0.
29 23.
6 4.
5 950 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Symbol RθJA RθJC MDP18N50B MDF18N50B 62.
5 62.
5 0.
53 3.
4 Unit oC/W Magnachip Semiconductor Ltd.
MDP1850B / MDF18N50B N-channel MOSFET 500V Ordering Information Part Number MDP18N50BTH MDF18N50BTH Marking MDP18N50B MDF18N50B Temp.
Range -55~150oC -55~150oC Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free Electrical Characteristics (Ta = 25oC) Characteristics Symbol Test Condition Min Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 500 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.
0 Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - Drain-Source ON Resistance RDS(ON) VGS = 10V...


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