DatasheetsPDF.com

MDP18N50

MagnaChip
Part Number MDP18N50
Manufacturer MagnaChip
Description N-Channel MOSFET
Published Sep 13, 2015
Detailed Description MDP18N50 N-channel MOSFET 500V Preliminary – Subject to change without notice MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0...
Datasheet PDF File MDP18N50 PDF File

MDP18N50
MDP18N50


Overview
MDP18N50 N-channel MOSFET 500V Preliminary – Subject to change without notice MDP18N50 N-Channel MOSFET 500V, 18.
0 A, 0.
27Ω General Description The MDP18N50 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
MDP18N50 is suitable device for SMPS, HID and general purpose applications.
Features VDS = 500V ID = 18.
0A @VGS = 10V RDS(ON) < 0.
27Ω @VGS = 10V Applications Power Supply HID Lighting Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 500 ±30 18 11 72 236 1.
89 4.
5 950 -55~150 Unit V V A A 72 W W/ oC V/ns mJ oC Symbol RθJA RθJC Rating 62.
5 0.
53 Unit oC/W Ordering Information Part Number MDP18N50 Feb2009.
Version 1.
0 Temp.
Range -55~150oC 1 Package TO-220 Packing Tube MagnaChip Semiconductor Ltd.
MDP18N50 N-channel MOSFET 500V Preliminary – Subject to change without notice Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Drain Cut-Off Current IDSS Gate Leakage Current IGSS Drain-Source ON Resistance RDS(ON) Forward Transconductance Dynamic Characteristics gfs Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)