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NPT1015B

MA-COM
Part Number NPT1015B
Manufacturer MA-COM
Description GaN Wideband Transistor
Published Sep 4, 2015
Detailed Description NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for line...
Datasheet PDF File NPT1015B PDF File

NPT1015B
NPT1015B

Overview
NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.
5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 3.
5 GHz  28 V Operation  12 dB Gain @ 2.
5 GHz  54 % Drain Efficiency @ 2.
5 GHz  100 % RF Tested  Standard metal ceramic package with bolt down flange  RoHS* Compliant Description The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.
5 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.
5 dBm) in an industry standard metal-ceramic package with bolt down flange.
The NPT1015 is ideally suited for defense communications, land mobile radio, avionics, wireles...


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