RF Transistor - ON Semiconductor
Description
Ordering number : ENA1120A
2SC5646A
RF Transistor
4V, 30mA, fT=12.
5GHz, NPN Single SSFP
http://onsemi.
com
Features
• Low-noise
: NF=1.
5dB typ (f=2GHz)
• High cut-off frequency : fT=10GHz typ (VCE=1V)
: fT=12.
5GHz typ (VCE=3V)
• Low-voltage operation
• High gain
: ⏐S21e⏐2=9.
5dB typ (f=2GHz)
• Ultrasmall, slim flat-lead package (1.
4mm×0.
8mm×0.
6mm)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature
VCBO VCEO VEBO IC PC Tj
Storage Temperature
Tstg
Conditions
Ratings 9 4 2
30 100 150 --55 to +150
Unit V V V mA
mW °C °C
Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7029A-002
1.
4 0.
25 0.
1
3
2SC5646A-TL-H
Product & Package Information
• Package
: SSFP
• JEITA, JEDEC
: SC-81
• Minimum Packing Quantity : 8,000 pcs.
/reel
Packing Type: TL
Marking
1.
4 0.
3 0.
8 0.
3
LOT No.
LOT No.
1 0.
45
2 0.
2
0 to 0.
02
NF
TL
Electrical Connection
0.
07 0.
6
12 3
1 : Base 2 : Emitter 3 : Collector
SSFP
3 1
2
0.
07
Semiconductor Components Industries, LLC, 2013 August, 2013
71812 TKIM/31710AB TKIM TC-00002250 No.
A1120-1/9
2SC5646A
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
Output Capacitance Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
ICBO IEBO hFE fT1 fT2 Cob
Cre
⏐S21e⏐21 ⏐S21e⏐22 NF
Conditions
VCB=5V, IE=0A VEB=1V, IC=0A VCE=1V, IC=5mA VCE=1V, IC=5mA VCE=3V, IC=15mA
VCB=1V, f=1MHz
VCE=1V, IC=5mA, f=2GHz VCE=3V, IC=15mA, f=2GHz VCE=1V, IC=3mA, f=2GHz
Ordering Information
Device 2SC56...
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