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30N60B3D

Fairchild Semiconductor
Part Number 30N60B3D
Manufacturer Fairchild Semiconductor
Description HGTG30N60B3D
Published Aug 26, 2015
Detailed Description Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30...
Datasheet PDF File 30N60B3D PDF File

30N60B3D
30N60B3D

Overview
Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49170.
The diode used in anti-parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential...


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