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RJK03H1DPA

Part Number	RJK03H1DPA
Manufacturer	Renesas Technology
Description	Built in SBD N Channel Power MOS FET
Published	Aug 21, 2015
Detailed Description	RJK03H1DPA 30V, 45A, 2.4mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed swi...
Datasheet	RJK03H1DPA PDF File

Overview

RJK03H1DPA 30V, 45A, 2.
4mΩmax.
Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Preliminary Datasheet R07DS0216EJ0300 Rev.
3.
00 Mar 22, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 5 678 D DDD 4321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Chann...

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RJK03H1DPA Built in SBD N Channel Power MOS FET - Renesas Technology

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