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FDMC86260

Fairchild Semiconductor
Part Number FDMC86260
Manufacturer Fairchild Semiconductor
Description N-Channel Power Trench MOSFET
Published Aug 20, 2015
Detailed Description FDMC86260 N-Channel Power Trench® MOSFET FDMC86260 N-Channel Power Trench® MOSFET 150 V, 16 A, 34 mΩ December 2012 Fe...
Datasheet PDF File FDMC86260 PDF File

FDMC86260
FDMC86260

Overview
FDMC86260 N-Channel Power Trench® MOSFET FDMC86260 N-Channel Power Trench® MOSFET 150 V, 16 A, 34 mΩ December 2012 Features General Description „ Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.
4 A „ Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.
8 A „ High performance technology for extremely low rDS(on) „ 100% UIL Tested „ Termination is Lead-free „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application „ DC-DC Conversion Pin 1 Pin 1 S S SG S S D D D DD D Top Bottom Power 33 SD GD MOSFET Maximum Ratings...


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