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K2354

NEC
Part Number K2354
Manufacturer NEC
Published Aug 16, 2015
Description 2SK2354
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING
Datasheet PDF File K2354 PDF File

K2354
K2354



Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis- tor designed for high voltage switching applications.
FEATURES • Low On-Resistance 2SK2353: RDS(on) = 1.
4 Ω (VGS = 10 V, ID = 2.
5 A) 2SK2354: RDS(on) = 1.
5 Ω (VGS = 10 V, ID = 2.
5 A) • Low Ciss Ciss = 670 pF TYP.
• High Avalanche Capability Ratings • Isolate TO-220 Package 15.
0 ±0.
3 3 ±0.
1 12.
0 ±0.
2 PACKAGE DIMENSIONS (in millimeters) 10.
0 ±0.
3.
4.
5 ±0.
2 3.
2 ±0.
2 2.
7 ±0.
2 4 ±0.
2 13.
5 MIN.
QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
0.
7 ±0.
1 2.
54 1.
3 ±0.
2 1.
5 ±0.
2 2.
54 2.
5 ±0.
1 0.
65 ±0.
1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2353/2354) VDSS 450/500 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±4.
5 A Drain Current (pulse)* ID(pulse) ±18 A Total Power Dissipation (Tc = 25 ˚C) PT1 30 W Total Power Dissipation (Ta = 25 ˚C) PT2 2.
0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS 4.
5 A Single Avalanche Energy** EAS 17.
4 mJ 1 23 1.
Gate 2.
Drain 3.
Source MP-45F (ISOLATED TO-220) Drain Gate Body Diode * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Source Document No.
TC-2499 (O.
D.
No.
TC-8047) Date Published November 1994 P Printed in Japan The information in this document is subject to change without notice.
© 1994 2SK2353/2SK2354 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS(on) MIN.
Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time ...



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