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LDTBG12GPT3G

LRC
Part Number LDTBG12GPT3G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 16, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor...
Datasheet PDF File LDTBG12GPT3G PDF File

LDTBG12GPT3G
LDTBG12GPT3G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPT1G zApplications Driver zFeatures 1) High hFE.
300 (Min.
) (VCE / IC=2V / 0.
5A) 2) Low saturation voltage, (VCE(sat)=0.
4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
• We declare that the material of product compliance with RoHS requirements.
zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits -60±10 -60 ±10 -5 -1 -2 ∗1 0.
5 2 ∗2 150 −55 to +150 Unit V V V A A W °C °C ∗1 Pw≤10ms, Duty cycle≤1/2 ∗2 When mounted on a 40×40×0.
7 mm ceramic board.
DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping 3 1 2 SOT-23 1 BASE R1 R 3 COLLECTOR R=10kΩ 2 EMITTER LDTBG12GPT1G Q8 1 22 3000/Tape & Reel LDTBG12GPT3G Q8 1 22 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R Min.
-50 -50 -5 − -300 − 300 7 Transition frequency fT ∗ − ∗ Characteristics of built-in transistor Typ.
− − − − − − − 10 80 Max.
-70 -70 − -0.
5 -580 -0.
4 − 13 − Unit V V V µA µA V − kΩ MHz Conditions IC=-50µA IC=-1mA IE=-720µA VCB=-40V VEB=-4V IC/IB=-500mA/-5mA VCE=-2V, IC=-500mA − VCE=-5V, IE=−-0.
1A, f=-30MHz 1/3 LESHAN RADIO COMPANY, LTD.
LDTBG12GPT1G zElectrical characteristic curves COLLECTOR CURRENT : IC (A) 10 5 2 1 500m 200m 100m 50m ICP DC P PW=100mW=...


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