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LDTDG12GPT3G

LRC
Part Number LDTDG12GPT3G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 16, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor...
Datasheet PDF File LDTDG12GPT3G PDF File

LDTDG12GPT3G
LDTDG12GPT3G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver zFeatures 1) High hFE.
300 (Min.
) (VCE / IC=2V / 0.
5A) 2) Low saturation voltage, (VCE(sat)=0.
4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
• We declare that the material of product compliance with RoHS requirements.
zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 60±10 60±10 5 1 2 ∗1 0.
5 2 ∗2 150 −55 to +150 Unit V V V A A W °C °C ∗1 Pw≤10ms, Duty cycle≤1/2 ∗2 When mounted on a 40×40×0.
7 mm ceramic board.
DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping 3 1 2 SC-89 1 BASE R1 R 3 COLLECTOR R=10kΩ 2 EMITTER LDTDG12GPT1G Q7 1 22 3000/Tape & Reel LDTDG12GPT3G Q7 1 22 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R Min.
50 50 5 − 300 − 300 7 Transition frequency fT ∗ − ∗ Characteristics of built-in transistor Typ.
− − − − − − − 10 80 Max.
70 70 − 0.
5 580 0.
4 − 13 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=720µA VCB=40V VEB=4V IC/IB=500mA/5mA VCE=2V, IC=500mA − VCE=5V, IE=−0.
1A, f=30MHz 1/3 LESHAN RADIO COMPANY, LTD.
LDTDG12GPT1G zElectrical characteristic curves COLLECTOR CURRENT : IC (A) 10 5 2 1 500m 200m 100m 50m ICP DC P PW=100mW=s1∗0ms∗ 20m 10m 5m 14W×18l×...


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