DatasheetsPDF.com

LDTB114EET3G

LRC
Part Number LDTB114EET3G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 16, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTB114EET3G PDF File

LDTB114EET3G
LDTB114EET3G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Supply voltage Input voltage Output current VCC VIN IC Power dissipation Junction temperature Storage temperature PD Tj Tstg Limits −50 −40 to +10 −500 200 150 −55 to +150 Unit V V mA mW C C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB114EET1G Q6 10 10 3000/Tape & Reel LDTB114EET3G Q6 10 10 10000/Tape & Reel LDTB114EET1G 3 1 2 SC-89 1 BASE R1 R2 3 COLLECTOR 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Input voltage Output voltage Input current Output current DC current gain VI(off) VI(on) VO(on) II IO(off) GI − −3 − − − 56 Input resistance R1 7 Resistance ratio Transition frequency ∗ Characteristics of built-in transistor R2/R1 fT ∗ 0.
8 − Typ.
− − −0.
1 − − − 10 1 200 Max.
−0.
5 − −0.
3 −0.
88 −0.
5 − 13 1.
2 − Unit V V mA µA − kΩ − MHz Conditions VCC= −5V, IO= −100µA VO= −0.
3V, IO= −10mA IO/II= −50mA/−2.
5mA VI= −5V VCC= −50V, VI=0V VO= −5V, IO= −50mA − − VCE= −10V, IE=50mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD.
LDTB114EET1G zElectrical characteristic curves INPUT VOLTAGE : VI (on) (V) -100 VO= −0.
3V -50 -20 -10 -5 -2 -1 -500m Ta= −40 C 25 C 100 C -200m -100m -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO (A) Fi...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)