DatasheetsPDF.com

LDTB123YET3G

LRC
Part Number LDTB123YET3G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 16, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTB123YET3G PDF File

LDTB123YET3G
LDTB123YET3G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTB123YET1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Supply voltage Input voltage Output current VCC VIN IC Power dissipation Junction temperature Storage temperature PD Tj Tstg Limits −50 −12 to +5 −500 200 150 −55 to +150 3 1 2 SC-89 1 BASE R1 R2 3 COLLECTOR 2 Unit EMITTER V V mA mW C C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB123YET1G K9 2.
2 10 3000/Tape & Reel LDTB123YET3G K9 2.
2 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗ Transition frequency of the device Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min.
− −2 − − − 56 1.
54 3.
6 − Typ.
− − −0.
1 − − − 2.
2 4.
5 200 Max.
−0.
3 − −0.
3 −3.
0 −0.
5 − 2.
86 5.
5 − Unit V V mA µA − kΩ − MHz Conditions VCC= −5V, IO= −100µA VO= −0.
3V, IO= −20mA IO/II= −50mA/−2.
5mA VI= −5V VCC= −50V, VI= 0V VO= −5V, IO= −50mA − − VCE= −10V, IE= 50mA, f= 100MHz ∗ 1/3 LESHAN RADIO COMPANY, LTD.
LDTB123YET1G zElectrical characteristic curves INPUT VOLTAGE : VI (on) (V) -100 VO= −0.
3V -50 -20 -10 -5 Ta= −40°C -2 25 °C 100 °C -1 -500m -200m -100m -0.
5m -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)