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LDTB113ZET3G

LRC
Part Number LDTB113ZET3G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 16, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTB113ZET3G PDF File

LDTB113ZET3G
LDTB113ZET3G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTB113ZET1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IC PD Tj Tstg Limits −50 −10 to +5 −500 200 150 −55 to +150 Unit V V mA mW C C 3 1 2 SC-89 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB113ZET1G K8 1 10 3000/Tape & Reel LDTB113ZET3G K8 1 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Input voltage VI(off) VI(on) − −3 Output voltage VO(on) − Input current II − Output current IO(off) − DC current gain GI 56 Input resistance R1 0.
7 Resistance ratio R2/R1 8 Transition frequency fT ∗ Transition frequency of the device − Typ.
− − − − − − 1 10 200 Max.
−0.
3 − −0.
3 −7.
2 −0.
5 − 1.
3 12 − Unit V V mA µA − kΩ − MHz Conditions VCC= −5V, IO= −100µA VO= −0.
3V, IO= −20mA IO/II= −50mA/−2.
5mA VI= −5V VCC= −50V, VI=0V VO= − 5V, IO= −50mA − − VCE= −10V, IE=50mA, f=100MHz ∗ 1/3 LESHAN RADIO COMPANY, LTD.
LDTB113ZET1G zElectrical characteristic curves INPUT VOLTAGE : VI (on) (V) -100 VO= −0.
3V -50 -20 -10 -5 -2 -1 -500m Ta= −40 C 25 C 100 C -200m -100m -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO (A) Fig.
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