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LDTB114GKT1G

LRC
Part Number LDTB114GKT1G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 16, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTB114GKT1G PDF File

LDTB114GKT1G
LDTB114GKT1G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Each pin mounted on the recommended land Symbol VCBO VCEO VEBO IC Pd ∗ Tj Tstg Limits −50 −50 −5 −500 200 150 −55 to +150 DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping Unit V V V mA mW C C LDTB114GKT1G K7 10 3000/Tape & Reel LDTB114GKT3G K7 10 10000/Tape & Reel LDTB114GKT1G 3 1 2 SC-89 1 BASE R2 3 COLLECTOR 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current BVCEO BVEBO ICBO Emitter cutoff curren IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ratio hFE Input resistance R Transition frequency fT ∗ ∗Characteristics of built-in transistor Min.
−50 −50 −5 − − − 56 7 − Typ.
− − − − − − − 10 200 Max.
− − − −0.
5 −580 −0.
3 − 13 − Unit V V V µA µA V − kΩ MHz Conditions IC= −50µA IC= −1mA IE= −720µA VCB= −50V VEB= −4V IC/IB= −50mA/−2.
5mA IC= −50mA , VCE= −5V − VCE= −10V , IE=50mA , f=100MHz 1/3 LESHAN RADIO COMPANY, LTD.
LDTB114GKT1G DC CURRENT GAIN : hFE CO...


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