DatasheetsPDF.com

LDTB143TKT1G

LRC
Part Number LDTB143TKT1G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 16, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTB143TKT1G PDF File

LDTB143TKT1G
LDTB143TKT1G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTB143TKT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −50 −40 −5 −500 200 150 −55 to +150 Unit V V V mA mW C C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB143TKT1G K2 4.
7 3000/Tape & Reel LDTB143TKT3G K2 4.
7 10000/Tape & Reel 3 1 2 SC-89 1 BASE R1 3 COLLECTOR 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Typ.
Max.
Unit Conditions Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −40 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50µA Collector cutoff current ICBO − − −0.
5 µA VCB= −50V Emitter cutoff current IEBO − − −0.
5 µA VEB= −4V Collector-emitter saturation voltage VCE(sat) − − −0.
3 V IC/IB= −50mA/−2.
5mA DC current transfer ratio hFE 100 250 600 − VCE= −5V, IC= −50mA Input resistance R1 3.
29 4.
7 6.
11 kΩ − Transition frequency ∗ Characteristics of built-in transistor fT ∗ − 200 − MHz VCE= −10V, IE=50mA, f=100MHz 1/3 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) zElectrical characteristic cu...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)