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LDTD123YET1G

LRC
Part Number LDTD123YET1G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 16, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTD123YET1G PDF File

LDTD123YET1G
LDTD123YET1G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IC Pd Tj Tstg Limits 50 −5 to +12 500 200 150 −55 to +150 Unit V V mA mW C C LDTD123YET1G 3 1 2 SC-89 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD123YET1G E9 2.
2 10 3000/Tape & Reel LDTD123YET1G E9 2.
2 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗Transition frequency of the device Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min.
− 2 − − − 56 1.
54 3.
6 − Typ.
− − 0.
1 − − − 2.
2 4.
5 200 Max.
0.
3 − 0.
3 3.
6 0.
5 − 2.
86 5.
5 − Unit V V mA µA − kΩ − MHz Conditions VCC=5V, IO=100µA VO=0.
3V, IO=20mA IO/II=50mA/2.
5mA VI=5V VCC=50V, VI=0V VO=5V, IO=50mA − − VCE=10V, IE= −50mA, f=100MHz ∗ 1/3 LESHAN RADIO COMPANY, LTD.
LDTD123YET1G zElectrical characteristic curves INPUT VOLTAGE : VI(on) (V) 100 VO=0.
3V 50 20 10 5 2 1 500m Ta= −40 C 25 C 100 C 200m 100m 500µ 1m 2m 5m 10m 20m 50m100m 200m 500m OUTPUT CURRENT : IO (A) Fig.
1 Input voltage vs.
output current (ON characteristics) ...


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