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LDTD113ZET1G

LRC
Part Number LDTD113ZET1G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 16, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTD113ZET1G PDF File

LDTD113ZET1G
LDTD113ZET1G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IC PD Tj Tstg Limits 50 −5 to +10 500 200 150 −55 to +150 Unit V V mA mW °C °C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD113ZET1G E8 1 10 3000/Tape & Reel LDTD113ZET1G E8 1 10 10000/Tape & Reel LDTD113ZET1G 3 1 2 SC-89 1 BASE R1 R2 3 COLLECTOR 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Typ.
Max.
Unit Conditions Input voltage VI(off) − − 0.
3 VCC=5V, IO=100µA V VI(on) 1.
5 − − VO=0.
3V, IO=20mA Output voltage VO(on) − 0.
1 0.
3 V IO/II=50mA/2.
5mA Input current II − − 7.
2 mA VI=5V Output current IO(off) − − 0.
5 µA VCC=50V, VI=0V DC current gain GI 82 − − − VO=5V, IO=50mA Input resistance R1 0.
7 1 1.
3 kΩ − Resistance ratio R2/R1 8 10 12 − − Transition frequency fT ∗ − 200 − MHz VCE=10V, IE=−50mA, f=100MHz ∗ Characteristics of built-in transistor 1/3 LESHAN RADIO COMPANY, LTD.
LDTD113ZET1G zElectrical characteristic curves INPUT VOLTAGE : VI (on) (V) 100 VO=0.
3V 50 20 10 5 2 1 500m Ta=−40°C 25°C 100°C 200m 100m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.
1 Input voltage vs.
output cu...


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