DatasheetsPDF.com

LDTD113EET1G

Part Number	LDTD113EET1G
Manufacturer	LRC
Description	Bias Resistor Transistor
Published	Aug 16, 2015
Detailed Description	LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet	LDTD113EET1G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IC Pd Tj Tstg Limits 50 −10 to +10 500 200 150 −55 to +150 Unit V V mA mW C C LDTD113EET1G 3 1 2 SC-89 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD113EET1G E4 1 1 3000/Tape & Reel LDTD113EET1G E4 1 1 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗ Characteristics of built-in transistor Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗ Min.
− 3 − − − 33 0.
7 0.
8 − Typ.
− − 0.
1 − − − 1 1 200 Max.
0.
5 − 0.
3 7.
2 0.
5 − 1.
3 1.
2 − Unit V V mA µA − kΩ − MHz Conditions VCC=5V, IO=100µA VO=0.
3V, IO=20mA IO/II=50mA/2.
5mA VI=5V VCC=50V, VI=0V VO=5V, IO=50mA − − VCE=10V, IE= −50mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD.
LDTD113EET1G zElectrical characteristic curves 100 VO=0.
3V 50 INPUT VOLTAGE : VI(on) (V) 20 10 5 2 1 500m Ta= −40 C 25 C 100 C 200m 100m 500µ 1m 2m 5m 10m 20m 50m100m 200m 500m OUTPUT CURRENT : IO (A) Fig.
1 Input voltage vs.
output current (ON characteristics) OUTPUT...

Similar Datasheet

LDTD113EET1G Bias Resistor Transistor - LRC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)