LESHAN RADIO COMPANY, LTD.
Bias Resistor TransistorNPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTD143TKT1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 50 40 5 500 200 150
−55 to +150
Unit V V V mA
mW C C
3
1 2
SC-89
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD143TKT1G
E2
4. 7 _ 3000/Tape & Reel
LDTD143TKT1G
E2
4. 7 _ 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 50
Collector-emitter breakdown voltage BVCEO 40
Emitter-base breakdown voltage
BVEBO 5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 100
Input resistance
R1 3. 29
Transition frequency ∗ Characteristics of built-in transistor
fT ∗ −
Typ. − − − − − −
250 4. 7 200
Max. Unit
Conditions
− V IC=50µA
− V IC=1mA
− V IE=50µA
0. 5 µA VCB=50V
0. 5 µA VEB=4V
0. 3 V IC/IB=50mA/2. 5mA
600 − VCE=5V, IC=50mA
6. 11 kΩ
−
− MHz VCE=10V, IE= −50mA, f=100MHz
1/3
LESHAN RADIO COMPANY, LTD. LDTD143TKT1G
zElectrical characteristic curves
DC CURRENT GAIN : hFE COLLECTOR ...
LDTD143TKT1G PDF File
