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LDTA115GET1G

LRC
Part Number LDTA115GET1G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 16, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor...
Datasheet PDF File LDTA115GET1G PDF File

LDTA115GET1G
LDTA115GET1G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits −50 −50 −5 −100 200 150 −55 to +150 Unit V V V mA mW °C °C LDTA115GET1G 3 1 2 SC-89 1 BASE R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA115GET1G Q4 − 100 3000/Tape & Reel LDTA115GET3G Q4 − 100 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT Min.
Typ.
Max.
Unit Conditions −50 − − V IC= −50 µA −50 − − V IC= −1mA −5 − − V IE= −72 µA − − −0.
5 µA VCB= −50V −30 − −58 µA VEB= −4V − − −0.
3 V IC= −5mA, IB= −0.
25mA 82 − − − IC= −5mA, VCE= −5V 70 100 130 kΩ − − 250 − MHz VCE= −10V, IE=5mA, f=100MHz ∗ 1/3 LESHAN RADIO COMPANY, LTD.
LDTA115GET1G zElectrical characteristic curves DC CURRENT GAIN : hFE 1k...


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