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HAT2175H

Renesas Technology
Part Number HAT2175H
Manufacturer Renesas Technology
Published Aug 16, 2015
Description Silicon N-Channel MOSFET
Detailed Description HAT2175H Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • Hig...
Datasheet PDF File HAT2175H PDF File

HAT2175H
HAT2175H


Overview
HAT2175H Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 33 mΩ typ.
(at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0006-0400 Rev.
4.
00 Sep 20, 2005 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 100 ± 20 15 60 15 15 22.
5 15 8.
34 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.
4.
00 Sep 20, 2005 page 1 of 7 HAT2175H Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4.
Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 ± 20 — — 4.
0 — — 15 — — — — — — — — — — — — — Typ — — — — — 33 34 25 1445 185 61 0.
55 21 8 4.
5 17 8.
2 28 4.
7 0.
84 45 Max — — ± 10 1 6.
0 42 46 — — — — — — — — — — — — 1.
10 — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS =...


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