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RJK4006DPD

Renesas
Part Number RJK4006DPD
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Aug 16, 2015
Detailed Description RJK4006DPD Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • Hi...
Datasheet PDF File RJK4006DPD PDF File

RJK4006DPD
RJK4006DPD


Overview
RJK4006DPD Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 2, 4 12 3 1 3 REJ03G1547-0100 Rev.
1.
00 Dec 19, 2008 1.
Gate 2.
Drain 3.
Source 4.
Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation VDSS VGSS IDNote4 ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C 4.
Limited by maximum safe operation area Ratings 400 ±30 8 24 8 24 8 3.
7 65 1.
92 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C REJ03G1547-0100 Rev.
1.
00 Dec 19, 2008 Page 1 of 6 RJK4006DPD Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 400 — — 3.
0 — — — — — — — — — — — — — Notes: 5.
Pulse test Typ — — — — 0.
69 620 80 11 30 30 60 20 20 4 9 0.
9 230 Max — 1 ±0.
1 4.
5 0.
80 Unit V µA µA V Ω (Ta = 25°C) Test conditions ID = 10 mA, VGS = 0 VDS = 400 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 4 A, VGS = 10 V Note5 — pF VDS = 25 V — pF VGS = 0 — pF f = 1 MHz — ns ID = 4 A — ns VGS = 10 V — ns RL = 50 Ω ...


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