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RJK0226DNS

Part Number	RJK0226DNS
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Aug 16, 2015
Detailed Description	Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS02...
Datasheet	RJK0226DNS PDF File

Overview

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.
1.
10 Mar 03, 2011 Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 2.
3 m typ.
(at VGS = 8 V)  Pb-free  Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25C, Rg  50  3.
Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 25 ±12 40 160 40 14.
7 27 30 4.
17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0260EJ0110 Rev.
1.
10 Mar 03, 2011 Page 1 of 6 RJK0226DNS Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4.
Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 25 — — 1.
2 — — — — — — — — — — — — — — — — Typ — — — — 2.
3 2.
7 115 4300 565 340 2.
6 31 11 8 18.
6 8.
7 65 13 0.
39 28 Max — ±0.
1 1 2.
5 2.
8 3.
4 — 6020 — — 4.
5 — — — — — — — — — Preliminary Unit V A mA V m m S pF pF pF  nC nC nC ns ns ns ns V ns (Ta = 25°C) Test ...

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RJK0226DNS Silicon N Channel Power MOS FET - Renesas Technology

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