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LDTA143EET1G

LRC
Part Number LDTA143EET1G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 15, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors S-LDTA11...
Datasheet PDF File LDTA143EET1G PDF File

LDTA143EET1G
LDTA143EET1G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors S-LDTA114EET1G Series with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.
The BRT eliminates these individual components by integrating them into a single device.
The use of a BRT can reduce both system cost and board space.
The device is housed in the SC-89 package which is designed for low power surface mount applications.
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC-89 package can be soldered using wave or reflow.
The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS Rating VCBO VCEO IC 50 Vdc 50 Vdc 100 mAdc Symbol Value Unit Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) PD RqJA 200 mW 1.
6 mW/°C 600 °C/W Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) PD RqJA 300 mW 2.
4 mW/°C 400 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
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