Power MOSFET - International Rectifier
Description
l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications.
Power dissipation levels up to 1.
5 watts are possible in typical surface mount applications.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
G
Thermal Resistance
RθJC RθJA RθJA
www.
irf.
com
Parameter Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient
PD - 91541B
IRLR/U120N
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.
185Ω
ID = 10A
S
D -P A K T O -2 52 A A
I-P A K TO -251AA
Max.
10 7.
0 35 48 0.
32 ± 16 85 6.
0 4.
8 5.
0
-55 to + 175
300 (1.
6mm from case )
Units
A
W W/°C
V mJ A mJ V/ns
°C
Typ.
––– ––– –––
Max.
3.
1 50 110
Units
°C/W
1
5/11/98
IRLR/U120N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
IDSS
IGSS
Q...
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