Power MOSFET - International Rectifier
Description
IRLR120NPbF IRLU120NPbF
l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated
l Lead-Free
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 watts are possible in typical
surface mount applications.
G D
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.
185Ω
S ID = 10A
S
G D-Pak IRLR120NPbF
S D G I-Pak
IRLU120NPbF
Base Part Number IRLR120NPbF
Package Type D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
IRLU120NPbF
IPak
Absolute Maximum Ratings
Tube
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
3000 75
Thermal Resistance
RθJC RθJA RθJA
Parameter Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient
Orderable Part Number
Note
IRLR120NPbF IRLR120NTRPbF
IRLR120NTRLPbF
IRLR120NTRRPbF IRLU120NPbF
EOL notice # 289
Max.
10 7.
0 35 48 0.
32 ± 16 85 6.
0 4.
8 5.
0
-55 to + 175
300 (1.
6mm from case )
Units
A
W W/°C
V mJ A mJ V/ns
°C
Typ.
––– ––– –––
Max.
3.
1 50...
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