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RJK03P7DPA

Renesas Technology
Part Number RJK03P7DPA
Manufacturer Renesas Technology
Description Dual N-Channel Power MOSFET
Published Aug 10, 2015
Detailed Description Preliminary Datasheet RJK03P7DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 30 A, 5.3 mΩ max. Built in SBD Dual N-channel ...
Datasheet PDF File RJK03P7DPA PDF File

RJK03P7DPA
RJK03P7DPA

Overview
Preliminary Datasheet RJK03P7DPA MOS1 30 V, 15 A, 9.
4 mΩ max.
MOS2 30 V, 30 A, 5.
3 mΩ max.
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0906EJ0110 Rev.
1.
10 Nov 01, 2012 Features  Low on-resistance  Capable of 4.
5 V gate drive  High density mounting  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and Schottky Barrier Diode 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain curre...


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