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IRF7807VD2PbF

Part Number	IRF7807VD2PbF
Manufacturer	International Rectifier
Published	Aug 8, 2015
Description	MOSFET / SCHOTTKY DIODE
Detailed Description	PD-95291 IRF7807VD2PbF FETKY MOSFET / SCHOTTKY DIODE • Co-Pack
Datasheet	IRF7807VD2PbF PDF File

Overview

PD-95291 IRF7807VD2PbF FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC A/S 1 8 K/D Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses A/S 2 A/S 3 7 K/D 6 K/D • Low Vf Schottky Rectifier • Lead-Free G4 5 K/D D Description SO-8 Top View The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.
HEXFET power MOSFETs utilize advanced processing techniques to achieve DEVICE CHARACTERISTICS extremely low on-resistance per silicon area.
Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics.
The SO- RDS(on) Q G Qsw Qoss IRF7807VD2 17mΩ 9.
5nC 3.
4nC 12nC 8 package is designed for vapor phase, infrared or wave soldering techniques.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.
5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Schottky and Body Diode 25°C Average ForwardCurrent 70°C Junction & Storage Temperature Range Symbol V DS VGS ID IDM PD IF (AV) TJ, TSTG Max.
30 ±20 8.
3 6.
6 66 2.
5 1.
6 3.
7 2.
3 –55 to 150 Units V A W A °C Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead www.
irf.
com RθJA RθJL Max.
50 20 Units °C/W °C/W 1 10/08/04 IRF7807VD2PbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage BVDSS Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage CCuurrrreennt t* RDS(on) VGS(th) IDSS Min Typ 30 – 17 1.
0 Max Units –V 25 mΩ V 50 µA 6.
0 mA Gate-Source Leakage Current* Tota...

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IRF7807VD2PbF MOSFET / SCHOTTKY DIODE - International Rectifier

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