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RJK6024DP3-A0

Part Number	RJK6024DP3-A0
Manufacturer	Renesas Technology
Description	High Speed Power Switching MOS FET
Published	Aug 6, 2015
Detailed Description	RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 28 Ω typ. (at ID...
Datasheet	RJK6024DP3-A0 PDF File

Overview

RJK6024DP3-A0 600 V - 0.
4 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 28 Ω typ.
(at ID = 0.
2 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223) 4 3 2 1 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1% 2.
Value at Tc = 25°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch No...

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RJK6024DP3-A0 High Speed Power Switching MOS FET - Renesas Technology

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