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K4012

Toshiba Semiconductor
Part Number K4012
Manufacturer Toshiba Semiconductor
Description 2SK4012
Published Aug 6, 2015
Detailed Description 2SK4012 com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regu...
Datasheet PDF File K4012 PDF File

K4012
K4012

Overview
2SK4012 com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.
33 Ω (typ.
) z High forward transfer admittance : |Yfs| = 8.
5 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive ...


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