60V N-Channel MOSFET - Fairchild Semiconductor
Description
FQD13N06 — N-Channel QFET® MOSFET
FQD13N06
N-Channel QFET® MOSFET
60 V, 10 A, 140 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 10 A, 60 V, RDS(on) = 140 mΩ (Max.
) @ VGS = 10 V, ID = 5.
0 A
• Low Gate Charge (Typ.
5.
8 nC)
• Low Crss (Typ.
15 pF)
• 100% Avalanche Tested
D
G S
D
D-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering, 1/8" from case for 5 seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
FQD13N06TM 60 10 6.
3 40 ± 25 85 10 2.
8 7.
0 2.
5 28 0.
22
-55 to +150
300
Unit V A A A V mJ A mJ
V/ns W W
W/°C °C
°C
Thermal Characteristics
Symbol
Parameter
RJC RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQD13N06TM 4.
5 110 50
Unit oC/W
©2000 Fairchild Semiconductor Corporation FQD13N06 Rev.
C1
1
www.
fairchildsemi.
com
FQD13N06 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQD13N06TM
Top Mark FQD13N06
Package DPAK
Packing Method Reel Size Tape and Reel 330 m...
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